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| (R) VND600SP DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY TARGET SPECIFICATION TYPE VND600SP s s s RDS(on) 30m Ilim 25A VCC 36 V DC SHORT CIRCUIT CURRENT: 25 A CMOS COMPATIBLE INPUTS PROPORTIONAL LOAD CURRENT SENSE s UNDERVOLTAGE AND OVERVOLTAGEn SHUT-DOWN s OVERVOLTAGE CLAMP s THERMAL SHUT DOWN s CURRENT LIMITATION s VERY LOW STAND-BY POWER DISSIPATION s PROTECTION AGAINST: n LOSS OF GROUND AND LOSS OF VCC s REVERSE BATTERY PROTECTION (*) DESCRIPTION The VND600SP is a monolithic device made using STMicroelectronics VIPower technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient BLOCK DIAGRAM 10 1 PowerSO-10TM compatibility table). This device has two channels in high side configuration; each channel has an analog sense output on which the sensing current is proportional (according to a known ratio) to the corresponding load current. Built-in thermal shutdown and outputs current limitation protect the chip from over temperature and short circuit. Device turns off in case of ground pin disconnection. V CC OVERVOLTAGE V CC CLAMP UNDERVOLTAGE PwCLAMP 1 DRIVER 1 INPUT 1 LOGIC INPUT 2 GND DRIVER 2 ILIM1 V dslim1 IOUT1 K Ot1 OUTPUT 1 CURRENT SENSE 1 OUTPUT 2 Ot2 PwCLAMP 2 Ot1 ILIM2 Vdslim2 IOUT2 OVERTEMP. 1 OVERTEMP. 2 Ot2 K CURRENT SENSE 2 (*) See application schematic at page 7 September 1999 1/10 1 VND600SP ABSOLUTE MAXIMUM RATING Symbol VCC -VCC - IGND IOUT IR IIN VCSENSE VESD PTOT Tj Tc TSTG Parameter DC supply voltage Reverse supply voltage DC reverse ground pin current Output current Reverse output current Input current Current sense maximum voltage Electrostatic discharge (R=1.5k; C=100pF) Power dissipation at T c=25C Junction operating temperature Case operating temperature Storage temperature Value 41 -0.3 -200 Internally limited -21 +/- 10 -3 +15 2000 90 Internally limited -40 to 150 -55 to 150 Unit V V mA A A mA V V V W C C C CONNECTION DIAGRAM (TOP VIEW) GROUND INPUT 2 INPUT 1 C.SENSE1 C.SENSE2 6 7 8 9 10 11 VCC 5 4 3 2 1 OUTPUT OUTPUT N.C. OUTPUT OUTPUT 2 2 1 1 CURRENT AND VOLTAGE CONVENTIONS ICC VCC IIN1 INPUT1 V IN1 CURRENT SENSE 1 IIN2 VIN2 INPUT2 IOUT2 OUTPUT2 IOUT1 OUTPUT1 ISENSE1 VSENSE1 VOUT1 VCC V ISENSE2 OUT2 VSENSE2 CURRENT SENSE 2 GROUND IGND 2/10 1 VND600SP THERMAL DATA Symbol Rthj-case (1) Rthj-case (2) Rthj-amb Parameter Thermal resistance junction-case Thermal resistance junction-case Thermal resistance junction-ambient (MAX) (MAX) (MAX) Value 1.75 1.2 50 Unit C/W C/W C/W Note: (1) one channel ON (2) two channels ON ELECTRICAL CHARACTERISTICS (8V Vclamp IS IL(off) Clamp voltage 41 48 Supply current On state; VIN=5V; VCC=13V; IOUT=0A; RSENSE=3.9k Off state output current VIN=VOUT=0V SWITCHING (VCC=13V) Symbol td(on) td(off) (dV OUT/dt)on (dV OUT/dt)off Parameter Turn-on delay time Turn-on delay time Turn-on voltage slope Turn-off voltage slope Test Conditions R1=2.6 R1=2.6 R1=2.6 R1=2.6 Min Typ 30 30 0.20 0.20 Max Unit s s V/s V/s PROTECTIONS Symbol Ilim T TSD TR THYST Vdemag VON Test Conditions VCC=13V DC short circuit current 5.5V 175 Vcc-41 Vcc-48 Vcc-55 50 3/10 1 VND600SP CURRENT SENSE (9VVCC16V) (See fig. 1) Symbol K1 K2 Parameter IOUT/ISENSE IOUT/ISENSE Test Conditions IOUT1 or IOUT2=0.5A; VSENSE =0.5V; other channels open; Tj= -40C...150C IOUT1 or IOUT2=5A; VSENSE=4V; other channels open; Tj=-40C Tj=25C...150C K3 IOUT/ISENSE Max analog sense output voltage Analog sense output voltage in overtemperature condition IOUT1 or IOUT2=15A; VSENSE=4V; other channels open; Tj=-40C Tj=25C...150C VSENSE1,2 VSENSEH VCC=5.5V; IOUT1,2=2.5A; RSENSE=10k VCC>8V, IOUT1,2=5A; RSENSE=10k VCC=13V; RSENSE=3.9k Min 3300 4200 4400 4200 4400 2 4 Typ 4400 4900 4900 4900 4900 Max 6000 6000 5750 5500 5250 V V 5.5 V Unit LOGIC INPUT (Channels 1,2) Symbol VIL IIL VIH IIH VI(hyst) VICL Parameter Input low level voltage Low level input current Input high level voltage High level input current Input hysteresis voltage Input clamp voltage Test Conditions VIN=1.25V VIN=3.25V IIN=1mA IIN=-1mA 0.5 6.5 7.4 -0.7 Min 1 3.25 10 8.5 Typ Max 1.25 Unit V A V A V V V Note 1: Vclamp and VOV are correlated. Typical difference is 5V. TRUTH TABLE (per channel) CONDITIONS Normal operation Overtemperature Undervoltage Overvoltage Short circuit to GND Short circuit to VCC Negative output voltage clamp INPUT L H L H L H L H L H L H L OUTPUT L H L L L L L L L L H H L SENSE 0 Nominal 0 VSENSEH 0 0 0 0 0 0 0 < Nominal 0 4/10 2 VND600SP ELECTRICAL TRANSIENT REQUIREMENTS ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E I -25 V +25 V -25 V +25 V -4 V +26.5 V II -50 V +50 V -50 V +50 V -5 V +46.5 V TEST LEVELS III -75 V +75 V -100 V +75 V -6 V +66.5 V TEST LEVELS RESULTS II III C C C C C C C C C C E E IV -100 V +100 V -150 V +100 V -7 V +86.5 V Delays and Impedance 2 ms 10 0.2 ms 10 0.1 s 50 0.1 s 50 100 ms, 0.01 400 ms, 2 I C C C C C C IV C C C C C E CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device. SWITCHING CHARACTERISTICS VOUT 70% dVOUT/dt(on) tr 10% 90% dVOUT/dt (of f) tf t INPUT td(on) td(of f) t 5/10 VND600SP Figure1: Waveforms NORMAL OPERATION INPUTn LOAD CURRENTn SENSEn UNDERVOLTAGE VCC INPUTn LOAD CURRENTn SENSEn OVERVOLTAGE VOV VU SD VUSDhyst VCC INPUTn LOAD CURRENTn SENSEn V CC < VOV VCC > VOV SHORT TO GROUND INPUTn LOAD CURRENTn LOAD VOLTAGEn SENSEn SHORT TO VCC INPUTn LOAD VOLTAGEn LOAD CURRENTn SENSEn ISENSE= V SENSEH RSENSE T TSD TR 6/10 VND600SP APPLICATION SCHEMATIC +5V Rprot INPUT1 VCC Dld C Rprot Rprot CURRENT SENSE1 INPUT2 OUTPUT1 Rprot CURRENT SENSE2 GND OUTPUT2 RSENSE1 RSENSE2 VGND RGND DGND GND PROTECTION REVERSE BATTERY NETWORK AGAINST Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND 600mV / IS(on)max. 2) RGND (-VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device's datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1k) should be inserted in parallel to DGND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network will produce a shift (j 600mV) in the input thresholds and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. LOAD DUMP PROTECTION Dld is necessary (Transil or MOV) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table. C I/Os PROTECTION: If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the C I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of C and the current required by the 7/10 1 VND600SP HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os. -VCCpeak /Ilatchup Rprot (VOHC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and Ilatchup 20mA; VOHC 4.5V 5k Rprot 65k. Recommended Rprot value is 10k. Fig 1: IOUT/ISENSE versus IOUT IOUT /ISENSE 6500 6000 max.Tj=-40C 5500 max.Tj=25...150C 5000 4500 4000 3500 3000 min.Tj=25...150C typical value min.Tj=-40C 0 2 4 6 8 IOUT (A) 10 12 14 16 8/10 1 VND600SP PowerSO-10TM MECHANICAL DATA DIM. A A1 B c D D1 E E1 E2 E3 E4 e F H h Q 0 1.25 13.80 0.50 1.70 8 mm. MIN. 3.35 0.00 0.40 0.35 9.40 7.40 9.30 7.20 7.20 6.10 5.90 1.27 1.35 14.40 0.049 0.543 0.002 0.067 TYP MAX. 3.65 0.10 0.60 0.55 9.60 7.60 9.50 7.40 7.60 6.35 6.10 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.366 0.283 0.283 0.240 0.232 0.050 0.053 0.567 inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300 0.374 0.291 300 0.250 0.240 B 0.10 A B 10 = H = A F A1 = 6 = = E = 1 5 = E2 E3 E1 = E4 = = A = SEATING PLANE DETAIL"A" Q e 0.25 M B C h D = D1 = = = SEATING PLANE = A1 L DETAIL"A" 9/10 1 VND600SP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 10/10 1 |
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